BAKOWSKI, M.; LANG, J.; LIM, J.-K.; HELL√ČN, J.; NILSSON, T.; SCHODT, B.; PODER, R.; BELOV, I.; LEISNER, P. Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers. Advances in Technology Innovation, v. 3, n. 4, p. 157-165, 30 Jul. 2018.