SELVAN, S.; YIK, G. K.; RAMASAMY, G.; ZAMAN, M. Simulation of III-V Material Based Steep Slope Tunnel FET for RF Harvester Application. International Journal of Engineering and Technology Innovation, [S. l.], v. 9, n. 3, p. 212–227, 2019. Disponível em: https://ojs.imeti.org/index.php/IJETI/article/view/2954. Acesso em: 20 apr. 2024.