Bakowski, M., Lang, J., Lim, J.-K., Hellén, J., Nilsson, T., Schodt, B., Poder, R., Belov, I., & Leisner, P. (2018). Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers. Advances in Technology Innovation, 3(4), 157–165. Retrieved from https://ojs.imeti.org/index.php/AITI/article/view/1020