BAKOWSKI, M.; LANG, J.; LIM, J.-K.; HELLÉN, J.; NILSSON, T.; SCHODT, B.; PODER, R.; BELOV, I.; LEISNER, P. Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers. Advances in Technology Innovation, [S. l.], v. 3, n. 4, p. 157–165, 2018. Disponível em: https://ojs.imeti.org/index.php/AITI/article/view/1020. Acesso em: 23 nov. 2024.