Bakowski, M., J. Lang, J.-K. Lim, J. Hellén, T. Nilsson, B. Schodt, R. Poder, I. Belov, and P. Leisner. “Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers”. Advances in Technology Innovation, vol. 3, no. 4, July 2018, pp. 157-65, https://ojs.imeti.org/index.php/AITI/article/view/1020.