Bakowski, M., J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, and P. Leisner. “Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers”. Advances in Technology Innovation 3, no. 4 (July 30, 2018): 157–165. Accessed April 20, 2024. https://ojs.imeti.org/index.php/AITI/article/view/1020.