[1]
“Simulation of III-V Material Based Steep Slope Tunnel FET for RF Harvester Application”, Int. j. eng. technol. innov., vol. 9, no. 3, pp. 212–227, May 2019, Accessed: Oct. 15, 2026. Available: https://ojs.imeti.org/index.php/IJETI/article/view/2954