Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers

  • M. Bakowski
  • J. Lang
  • J-K. Lim
  • J. Hellén
  • T.M.J. Nilsson
  • B. Schodt
  • R. Poder
  • I. Belov
  • P. Leisner
Keywords: GaN-on SiC, HEMT, RF power amplifier, thermo-mechanical and electrical reliability

Abstract

The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of solders, Sn63Pb36Ag2 and lead-free SnAgCu (SAC305), and two types of TIM materials, NanoTIM and TgonTM 805, for PCB attachment to the liquid cold plate were tested for thermo-mechanical reliability. Changes in the electrical performance of the devices, namely the reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.

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Published
2018-07-30
How to Cite
[1]
M. Bakowski, “Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers”, AITI, vol. 3, no. 4, pp. 157-165, Jul. 2018.
Section
Articles