Effects of Bi3+ Ion-Doped on the Microstructure and Photoluminescence of La0.97Pr0.03VO4 Phosphor

Hao-Long  Chen; Hung-Rung  Shih; Sean  Wu; Yee-Shin Chang

doi:10.46604/aiti.2021.5635

Authors

Hao-Long Chen Department of Mechanical Engineering, National Pingtung University of Science and Technology, Pingtung, Taiwan
Hung-Rung Shih Department of Mechanical and Computer-Aided Engineering, National Formosa University, Yunlin, Taiwan
Sean Wu Department of Digital Game and Animation Design, Tungfang Design University, Kaohsiung, Taiwan
Yee-Shin Chang Department of Electronic Engineering, National Formosa University, Yunlin, Taiwan

DOI:

https://doi.org/10.46604/aiti.2021.5635

Keywords:

sol-gel method, Pr3 ion, sensitizer, phosphors, flux

Abstract

The objective of this paper is to enhance the emission intensity of La0.97Pr0.03VO4 single-phased white light emitting phosphor. The Bi³⁺ ion-doped La0.97Pr0.03VO4 single-phased white light emitting phosphors are synthesized using a sol-gel method. The structure and photoluminescence properties of (La0.97-yBiy)Pr0.03VO4 (y = 0-0.05) phosphor are also examined. The XRD results show that the structure of La0.97Pr0.03VO4 phosphors with different concentrations of Bi³⁺ ion doping keeps the monoclinic structure. The SEM results show that the phosphor particles become smoother when the Bi³⁺ ion is doped. The excitation band for La0.97Pr0.03VO4 phosphor exhibits a blue shift from 320 nm to 308 nm as the Bi³⁺ ion contents are increased. The maximum emission intensity is achieved for a Bi³⁺ ion content of 0.5 mol%, which is about 30% greater than that with no Bi³⁺ ion doped. The CIE chromaticity coordinates are all located in the near white light region for different Bi³⁺ ion-doped La0.97Pr0.03VO4 phosphors.

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