Comparative Review of SiC and GaN Power Devices for High-Frequency DC–DC Converters

S M Tanvir Hassan Shovon; Md Shaoran Sayem; Sadman Shahriar Alam; Abu Shufian; Protik Parvez Sheikh

doi:10.46604/aiti.2026.16447

Authors

S M Tanvir Hassan Shovon Department of Electrical and Electronic Engineering, American International University-Bangladesh, Dhaka, Bangladesh
Md Shaoran Sayem Department of Electrical and Electronic Engineering, American International University-Bangladesh, Dhaka, Bangladesh
Sadman Shahriar Alam Department of Electrical and Electronic Engineering, American International University-Bangladesh, Dhaka, Bangladesh
Abu Shufian Department of Electrical and Electronic Engineering, American International University-Bangladesh, Dhaka, Bangladesh
Protik Parvez Sheikh Department of Electrical and Electronic Engineering, American International University-Bangladesh, Dhaka, Bangladesh

DOI:

https://doi.org/10.46604/aiti.2026.16447

Keywords:

wide-bandgap semiconductor, SiC MOSFET, GaN HEMT, DC-DC converter, power electronics

Abstract

This structured comparative review examines silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor (WBG) devices in high-frequency direct current (DC)-DC converters. Twenty-two peer-reviewed publications and industry reports, eleven from 2021–2026, were evaluated against criteria covering material physics, switching dynamics, converter topology performance, electromagnetic compatibility, thermal management, and reliability. A silicon-referenced normalized matrix combines material-, device-, converter-, and market-level indicators with topology mapping, electromagnetic interference (EMI) spectral comparison, and reliability physics. Reported DC-DC converter data show that GaN high electron mobility transistor (HEMT) designs reach the highest surveyed efficiency (98.5% in a 10 kW phase-shifted full-bridge above 150 kHz) and superior power density below 650 V, whereas SiC metal-oxide-semiconductor field-effect transistor (MOSFET) devices remain preferred above 1200 V and under high thermal stress; these values are topology-specific. Parasitic inductance, conducted EMI reaching 400 MHz, and packaging remain the principal barriers to SiC MOSFET and GaN HEMT adoption in power electronics.

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